30KPA60CA vs MX30KPA60CAE3TR feature comparison

30KPA60CA MDE Semiconductor Inc

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MX30KPA60CAE3TR Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Min 67 V 67 V
Breakdown Voltage-Nom 67 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 102 V 102 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 8 W 1.61 W
Reference Standard UL RECOGNIZED MIL-19500
Rep Pk Reverse Voltage-Max 60 V 60 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN Matte Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 14 1
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2
Qualification Status Not Qualified

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Compare MX30KPA60CAE3TR with alternatives