30KPA51A vs MX30KPA51AE3TR feature comparison

30KPA51A Sangdest Microelectronics (Nanjing) Co Ltd

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MX30KPA51AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description PLASTIC, P-600, 2 PIN ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code compliant unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 62.4 V
Breakdown Voltage-Min 56.64 V 57 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 8 W 1.61 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED MIL-19500
Rep Pk Reverse Voltage-Max 51 V 51 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Clamping Voltage-Max 86.4 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Terminal Finish Matte Tin (Sn)

Compare 30KPA51A with alternatives

Compare MX30KPA51AE3TR with alternatives