30KPA39ATR vs MX30KPA39AE3TR feature comparison

30KPA39ATR MDE Semiconductor Inc

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MX30KPA39AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 43.6 V
Clamping Voltage-Max 67.2 V 67.2 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 39 V 39 V
Surface Mount NO NO
Base Number Matches 3 1
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2
Pin Count 2
Breakdown Voltage-Min 43.6 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 30000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE
Terminal Position AXIAL

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