30KPA33CATR vs MX30KPA33CATR feature comparison

30KPA33CATR MDE Semiconductor Inc

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MX30KPA33CATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 36.9 V
Clamping Voltage-Max 58.5 V 58.5 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount NO NO
Base Number Matches 3 1
Package Description PLASTIC PACKAGE-2
Pin Count 2
Breakdown Voltage-Min 36.9 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JESD-30 Code O-PALF-W2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Technology AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL

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