30KPA33CATR vs MX30KPA33CATR feature comparison

30KPA33CATR MDE Semiconductor Inc

Buy Now Datasheet

MX30KPA33CATR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 36.9 V
Clamping Voltage-Max 58.5 V 58.5 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Package Description PLASTIC PACKAGE-2
Pin Count 2
Breakdown Voltage-Min 36.9 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30000 W
Number of Elements 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Technology AVALANCHE
Terminal Finish TIN LEAD

Compare MX30KPA33CATR with alternatives