30KPA33CATR
vs
30KP33CA
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MDE SEMICONDUCTOR INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
3
9
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Min
36.9 V
Breakdown Voltage-Nom
36.9 V
Case Connection
ISOLATED
Clamping Voltage-Max
58.5 V
Configuration
SINGLE
Diode Element Material
SILICON
JESD-30 Code
O-PALF-W2
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
30000 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
LONG FORM
Polarity
BIDIRECTIONAL
Power Dissipation-Max
8 W
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
33 V
Surface Mount
NO
Technology
AVALANCHE
Terminal Finish
TIN
Terminal Form
WIRE
Terminal Position
AXIAL