30KPA33CAE3 vs 30KPA33CATR feature comparison

30KPA33CAE3 Microsemi Corporation

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30KPA33CATR MDE Semiconductor Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MDE SEMICONDUCTOR INC
Package Description O-PALF-W2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 40.4 V
Breakdown Voltage-Min 36.9 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30000 W
Number of Elements 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 8 W
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount NO NO
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 3
Breakdown Voltage-Nom 36.9 V
Clamping Voltage-Max 58.5 V

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