30KPA258A vs 30KPA258ATR feature comparison

30KPA258A MDE Semiconductor Inc

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30KPA258ATR Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Package Description O-PALF-W2 PLASTIC PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Min 288.2 V 288.2 V
Breakdown Voltage-Nom 288.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 416.4 V 416.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 8 W 1.61 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 258 V 258 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 13 3
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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