30KP64A vs 30KPA64AE3 feature comparison

30KP64A EIC Semiconductor Inc

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30KPA64AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description ROHS COMPLIANT, PLASTIC, D6, 2 PIN O-PALF-W2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 78.6 V 78.3 V
Breakdown Voltage-Min 71.1 V 71.5 V
Breakdown Voltage-Nom 74.85 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 104 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 7 W 8 W
Rep Pk Reverse Voltage-Max 64 V 64 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 6
Pbfree Code Yes
Pin Count 2
Manufacturer Package Code P600
Moisture Sensitivity Level 1

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Compare 30KPA64AE3 with alternatives