30KP40AE3TR vs RT100KP40AE3 feature comparison

30KP40AE3TR Microsemi Corporation

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RT100KP40AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description PLASTIC PACKAGE-2 O-PALF-W2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 49.1 V 49.1 V
Breakdown Voltage-Min 44.4 V 44.4 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30000 W 100000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W 1.61 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pbfree Code Yes
Breakdown Voltage-Nom 46.75 V
Clamping Voltage-Max 68.6 V

Compare 30KP40AE3TR with alternatives

Compare RT100KP40AE3 with alternatives