30KP198CA vs MA30KPA198CATR feature comparison

30KP198CA MDE Semiconductor Inc

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MA30KPA198CATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Min 221.2 V 221.2 V
Breakdown Voltage-Nom 221.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 319.8 V 319.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 8 W 1.61 W
Reference Standard UL RECOGNIZED MIL-19500
Rep Pk Reverse Voltage-Max 198 V 198 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 1
Package Description PLASTIC PACKAGE-2
Pin Count 2
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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Compare MA30KPA198CATR with alternatives