30BF40
vs
ES3GHR6G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
ULTRA FAST RECOVERY
EFFICIENCY
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.4 V
1.3 V
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Non-rep Pk Forward Current-Max
60 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Recovery Time-Max
0.05 µs
0.035 µs
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
SMC, 2 PIN
Samacsys Manufacturer
Taiwan Semiconductor
Additional Feature
FREE WHEELING DIODE
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Reverse Current-Max
10 µA
Reverse Test Voltage
400 V
Time@Peak Reflow Temperature-Max (s)
30
Compare 30BF40 with alternatives
Compare ES3GHR6G with alternatives