3.0SMCJ8.0C-G
vs
SMLJ8.0CAE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MICROSEMI CORP
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
11.3 V
9.83 V
Breakdown Voltage-Min
8.99 V
8.89 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
8 V
8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
13
Part Package Code
DO-214AB
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
Breakdown Voltage-Nom
9.36 V
Clamping Voltage-Max
22 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Power Dissipation-Max
1.61 W
Terminal Finish
MATTE TIN
Compare 3.0SMCJ8.0C-G with alternatives
Compare SMLJ8.0CAE3TR with alternatives