3.0SMCJ7.0 vs 3.0SMCJ7.0-T/R feature comparison

3.0SMCJ7.0 Sangdest Microelectronics (Nanjing) Co Ltd

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3.0SMCJ7.0-T/R PanJit Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
Breakdown Voltage-Max 9.51 V 9.86 V
Breakdown Voltage-Min 7.78 V 7.78 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 7 V 7 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 18 1
Pbfree Code Yes
Part Package Code DO-214AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW INDUCTANCE
Breakdown Voltage-Nom 8.82 V
Clamping Voltage-Max 13.3 V

Compare 3.0SMCJ7.0 with alternatives

Compare 3.0SMCJ7.0-T/R with alternatives