3.0SMCJ6.0
vs
SMLJ6.0
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches
17
4
Package Description
R-PDSO-C2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
LOW INDUCTANCE
Breakdown Voltage-Max
8.15 V
Breakdown Voltage-Min
6.67 V
Breakdown Voltage-Nom
7.41 V
Clamping Voltage-Max
11.4 V
Configuration
SINGLE
Diode Element Material
SILICON
JESD-30 Code
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
6 V
Reverse Current-Max
1000 µA
Surface Mount
YES
Technology
AVALANCHE
Terminal Form
C BEND
Terminal Position
DUAL
Compare SMLJ6.0 with alternatives