3.0SMCJ58CA_R2_10001 vs US1006FL-AU_R1_000A1 feature comparison

3.0SMCJ58CA_R2_10001 PanJit Semiconductor

Buy Now Datasheet

US1006FL-AU_R1_000A1 PanJit Semiconductor

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.80
Breakdown Voltage-Max 74.1 V
Breakdown Voltage-Min 64.4 V
Breakdown Voltage-Nom 69.25 V
Clamping Voltage-Max 94 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity BIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 58 V 600 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Application GENERAL PURPOSE
Number of Phases 1
Output Current-Max 1 A
Reverse Recovery Time-Max 0.1 µs

Compare 3.0SMCJ58CA_R2_10001 with alternatives

Compare US1006FL-AU_R1_000A1 with alternatives