3.0SMCJ54-T3 vs SMLJ54E3 feature comparison

3.0SMCJ54-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMLJ54E3 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 73.33 V 73.3 V
Breakdown Voltage-Min 60 V 60 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 54 V 54 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 3 1
Part Package Code DO-214AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 66.65 V
Clamping Voltage-Max 96.3 V
JESD-609 Code e3
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.61 W
Reverse Current-Max 5 µA
Terminal Finish MATTE TIN

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Compare SMLJ54E3 with alternatives