3.0SMCJ51CA
vs
MVSMLG51CAE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
62.7 V
62.7 V
Breakdown Voltage-Min
56.7 V
56.7 V
Breakdown Voltage-Nom
59.7 V
59.7 V
Clamping Voltage-Max
82.4 V
21.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-215AB
JESD-30 Code
R-PDSO-C2
R-PDSO-G2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
1.61 W
Rep Pk Reverse Voltage-Max
51 V
51 V
Reverse Current-Max
2 µA
Reverse Test Voltage
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
MATTE TIN
Terminal Form
C BEND
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
22
1
Part Package Code
DO-215AB
Package Description
ROHS COMPLIANT, PLASTIC PACKAGE-2
Pin Count
2
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Reference Standard
MIL-19500
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