3.0SMCJ51AT/R7
vs
US1AWZT/R7
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
PAN JIT INTERNATIONAL INC
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.80
Breakdown Voltage-Max
65.2 V
Breakdown Voltage-Min
56.7 V
Breakdown Voltage-Nom
60.95 V
Clamping Voltage-Max
82.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
RECTIFIER DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-50 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
Reference Standard
MIL-STD-750; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
51 V
50 V
Reverse Current-Max
3 µA
Reverse Test Voltage
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
R-PDSO-C2
Pin Count
2
Application
GENERAL PURPOSE
Forward Voltage-Max (VF)
1 V
Non-rep Pk Forward Current-Max
30 A
Number of Phases
1
Output Current-Max
1 A
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reverse Recovery Time-Max
0.05 µs
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare 3.0SMCJ51AT/R7 with alternatives
Compare US1AWZT/R7 with alternatives