3.0SMCJ5.0CATR vs 3.0SMCJ5.0C_R2_00001 feature comparison

3.0SMCJ5.0CATR Sangdest Microelectronics (Nanjing) Co Ltd

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3.0SMCJ5.0C_R2_00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-08-30
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7 V 7.55 V
Breakdown Voltage-Min 6.4 V 6.4 V
Breakdown Voltage-Nom 6.7 V 6.98 V
Clamping Voltage-Max 9.2 V 9.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard MIL-STD-750 IEC-61000-4-2; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5 V 5 V
Reverse Current-Max 5000 µA
Reverse Test Voltage 5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Pbfree Code Yes
Package Description R-PDSO-C2
JEDEC-95 Code DO-214AB
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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