3.0SMCJ5.0CATR vs 3.0SMCJ5.0CA-GT3 feature comparison

3.0SMCJ5.0CATR Sangdest Microelectronics (Nanjing) Co Ltd

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3.0SMCJ5.0CA-GT3 Sensitron Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SENSITRON SEMICONDUCTOR
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-08-30
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7 V 7 V
Breakdown Voltage-Min 6.4 V 6.4 V
Breakdown Voltage-Nom 6.7 V 6.7 V
Clamping Voltage-Max 9.2 V 9.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard MIL-STD-750 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5 V 5 V
Reverse Current-Max 5000 µA 800 µA
Reverse Test Voltage 5 V 5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Pbfree Code Yes
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
JEDEC-95 Code DO-214AB
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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