3.0SMCJ36C-T3 vs 3SMC36CATR13 feature comparison

3.0SMCJ36C-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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3SMC36CATR13 Central Semiconductor Corp

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD CENTRAL SEMICONDUCTOR CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 49.89 V 46 V
Breakdown Voltage-Min 40 V 40 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 36 V 36 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 3
Pbfree Code No
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 43 V
Clamping Voltage-Max 58.1 V
JESD-609 Code e0
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Terminal Finish TIN LEAD

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