3.0SMCJ30C-G
vs
3.0SMCJ30CA
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
CONCORD SEMICONDUCTOR CORP
|
| Package Description |
R-PDSO-C2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Max |
42.2 V
|
|
| Breakdown Voltage-Min |
33.3 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-214AB
|
|
| JESD-30 Code |
R-PDSO-C2
|
|
| Non-rep Peak Rev Power Dis-Max |
3000 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
2
|
22
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
|
35.05 V
|
| Clamping Voltage-Max |
|
48.4 V
|
|
|
|
Compare 3.0SMCJ30C-G with alternatives