3.0SMCJ30A vs 3.0SMCJ30A feature comparison

3.0SMCJ30A Galaxy Microelectronics

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3.0SMCJ30A Littelfuse Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD LITTELFUSE INC
Package Description SMC, 2 PIN SMC, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 36.8 V 36.8 V
Breakdown Voltage-Min 33.3 V 33.3 V
Breakdown Voltage-Nom 35.05 V 35.05 V
Clamping Voltage-Max 48.4 V 48.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-202 IEC-61000-4-2, 4-4; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 1 µA 2 µA
Reverse Test Voltage 30 V 30 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Samacsys Manufacturer LITTELFUSE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AB
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 6.5 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 40