3.0SMCJ26CA-A vs SMLJ26C feature comparison

3.0SMCJ26CA-A Sangdest Microelectronics (Nanjing) Co Ltd

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SMLJ26C International Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD INTERNATIONAL SEMICONDUCTOR INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY LOW INDUCTANCE
Breakdown Voltage-Max 31.9 V 35.3 V
Breakdown Voltage-Min 28.9 V 28.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 4
Breakdown Voltage-Nom 32.1 V
Clamping Voltage-Max 46.6 V
Qualification Status Not Qualified
Reverse Current-Max 5 µA

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