3.0SMCJ24CATR-A vs SMLJ24CE3 feature comparison

3.0SMCJ24CATR-A Sangdest Microelectronics (Nanjing) Co Ltd

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SMLJ24CE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 29.5 V 32.6 V
Breakdown Voltage-Min 26.7 V 26.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 24 V 24 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code DO-214AB
Pin Count 2
Breakdown Voltage-Nom 29.65 V
Clamping Voltage-Max 9.6 V
JEDEC-95 Code DO-214AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA

Compare 3.0SMCJ24CATR-A with alternatives

Compare SMLJ24CE3 with alternatives