3.0SMCJ24C-G vs SMDJ24CAV7G feature comparison

3.0SMCJ24C-G Sangdest Microelectronics (Nanjing) Co Ltd

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SMDJ24CAV7G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 33.8 V 29.5 V
Breakdown Voltage-Min 26.7 V 26.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 24 V 24 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 2020-04-27
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 28.1 V
Clamping Voltage-Max 38.9 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 6.5 W
Reverse Current-Max 1 µA
Reverse Test Voltage 24 V
Terminal Finish MATTE TIN

Compare 3.0SMCJ24C-G with alternatives

Compare SMDJ24CAV7G with alternatives