3.0SMCJ160AT/R7 vs 3.0SMCJ160A-AU_R1_000A1 feature comparison

3.0SMCJ160AT/R7 PanJit Semiconductor

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3.0SMCJ160A-AU_R1_000A1 PanJit Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 205 V 205 V
Breakdown Voltage-Min 178 V 178 V
Breakdown Voltage-Nom 191.5 V 191.5 V
Clamping Voltage-Max 259 V 259 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-750; UL RECOGNIZED AEC-Q101; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 160 V 160 V
Reverse Current-Max 3 µA
Reverse Test Voltage 160 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-C2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 3.0SMCJ160AT/R7 with alternatives

Compare 3.0SMCJ160A-AU_R1_000A1 with alternatives