3.0SMCJ160 vs SMDJ160 feature comparison

3.0SMCJ160 Taiwan Semiconductor

Buy Now Datasheet

SMDJ160 Pulse Electronics Corporation

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD PULSE ELECTRONICS CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 218 V
Breakdown Voltage-Min 178 V
Breakdown Voltage-Nom 198 V 187.5 V
Clamping Voltage-Max 287 V 259 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 5 V
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 3000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 160 V 160 V
Reverse Current-Max 2 µA
Reverse Test Voltage 160 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish TIN
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 19 10