3.0SMCJ150A-G
vs
SMLJ150ATR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MICROSEMI CORP
Package Description
R-PDSO-C2
PLASTIC PACKAGE-2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
192.5 V
185 V
Breakdown Voltage-Min
167 V
167 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
150 V
150 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
1
Part Package Code
DO-214AB
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
Breakdown Voltage-Nom
176 V
Clamping Voltage-Max
46.6 V
JESD-609 Code
e0
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Power Dissipation-Max
1.61 W
Terminal Finish
TIN LEAD
Compare 3.0SMCJ150A-G with alternatives
Compare SMLJ150ATR with alternatives