3.0SMCJ12CATR-A vs SMDJ12C feature comparison

3.0SMCJ12CATR-A Sangdest Microelectronics (Nanjing) Co Ltd

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SMDJ12C Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 14.7 V
Breakdown Voltage-Min 13.3 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity BIDIRECTIONAL
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 12 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish PURE TIN
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 1 10
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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