3.0SMCJ100-T3 vs SMDJ100A/TR13 feature comparison

3.0SMCJ100-T3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

SMDJ100A/TR13 YAGEO Corporation

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD YAGEO CORP
Package Description R-PDSO-C2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 135.67 V 123 V
Breakdown Voltage-Min 111 V 111 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 3 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 18 Weeks
Date Of Intro 2019-04-29
Breakdown Voltage-Nom 117 V
Clamping Voltage-Max 162 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 6.5 W
Reverse Current-Max 2 µA
Reverse Test Voltage 100 V
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 40

Compare 3.0SMCJ100-T3 with alternatives

Compare SMDJ100A/TR13 with alternatives