2SK793 vs 2SK4179 feature comparison

2SK793 Toshiba America Electronic Components

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2SK4179 SANYO Semiconductor Co Ltd

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP SANYO SEMICONDUCTOR CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 850 V 75 V
Drain Current-Max (ID) 5 A 80 A
Drain-source On Resistance-Max 2.5 Ω 0.0137 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 150 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Part Package Code TO-220AB
Pin Count 3
Avalanche Energy Rating (Eas) 100 mJ
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 320 A

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