2SK3358-S
vs
DMNH10H028SK3Q-13
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
RENESAS ELECTRONICS CORP
DIODES INC
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
55 A
55 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
Surface Mount
NO
YES
Base Number Matches
2
1
Rohs Code
Package Description
DPAK-3/2
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
43 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
100 V
Drain-source On Resistance-Max
0.028 Ω
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
58 A
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare DMNH10H028SK3Q-13 with alternatives