2SK2777(2-10S1B) vs IRFSL9N60ATRL feature comparison

2SK2777(2-10S1B) Toshiba America Electronic Components

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IRFSL9N60ATRL International Rectifier

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TOSHIBA CORP INTERNATIONAL RECTIFIER CORP
Package Description IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 345 mJ 290 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 6 A 9.2 A
Drain-source On Resistance-Max 1.25 Ω 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 24 A 37 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Part Package Code TO-262AA
JEDEC-95 Code TO-262AA
JESD-609 Code e0
Terminal Finish TIN LEAD

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Compare IRFSL9N60ATRL with alternatives