2SK2777(2-10S1B)
vs
STB11NM60Z-1
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
STMICROELECTRONICS
|
| Package Description |
IN-LINE, R-PSIP-T3
|
ROHS COMPLIANT, I2PAK-3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
345 mJ
|
350 mJ
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
600 V
|
| Drain Current-Max (ID) |
6 A
|
11 A
|
| Drain-source On Resistance-Max |
1.25 Ω
|
0.45 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
250
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
24 A
|
44 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Additional Feature |
|
AVALANCHE RATED
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare 2SK2777(2-10S1B) with alternatives
Compare STB11NM60Z-1 with alternatives