2SK2684S
vs
HUF75617D3S
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
FAIRCHILD SEMICONDUCTOR CORP
|
| Package Description |
LDPAK-3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
100 V
|
| Drain Current-Max (ID) |
30 A
|
16 A
|
| Drain-source On Resistance-Max |
0.05 Ω
|
0.09 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G3
|
R-PSSO-G2
|
| JESD-609 Code |
e6
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
120 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN BISMUTH
|
Matte Tin (Sn)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
3
|
| JEDEC-95 Code |
|
TO-252AA
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
64 W
|
|
|
|
Compare 2SK2684S with alternatives
Compare HUF75617D3S with alternatives