2SK2553L
vs
2SK2553(L)
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
HITACHI LTD
|
RENESAS TECHNOLOGY CORP
|
| Package Description |
IN-LINE, R-PSIP-T3
|
IN-LINE, R-PSIP-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| Drain-source On Resistance-Max |
0.016 Ω
|
0.016 Ω
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Base Number Matches |
2
|
3
|
| Rohs Code |
|
No
|
| Pin Count |
|
3
|
| Case Connection |
|
DRAIN
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
60 V
|
| Drain Current-Max (Abs) (ID) |
|
50 A
|
| Drain Current-Max (ID) |
|
50 A
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
|
1
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
75 W
|
| Pulsed Drain Current-Max (IDM) |
|
200 A
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2SK2553L with alternatives
Compare 2SK2553(L) with alternatives