2SK2199
vs
IRFR221
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANYO ELECTRIC CO LTD
HARRIS SEMICONDUCTOR
Package Description
IN-LINE, R-PSIP-T3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
150 V
Drain Current-Max (ID)
0.8 A
4.6 A
Drain-source On Resistance-Max
5 Ω
0.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
15 W
50 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
4
Rohs Code
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
85 mJ
Case Connection
DRAIN
JEDEC-95 Code
TO-252AA
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
50 W
Pulsed Drain Current-Max (IDM)
18 A
Terminal Finish
Tin/Lead (Sn/Pb)
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
53 ns
Turn-on Time-Max (ton)
54 ns
Compare 2SK2199 with alternatives
Compare IRFR221 with alternatives