2SK1865 vs IRF843 feature comparison

2SK1865 Toshiba America Electronic Components

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IRF843 Rochester Electronics LLC

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TOSHIBA CORP ROCHESTER ELECTRONICS LLC
Part Package Code TO-220FL
Pin Count 3
Reach Compliance Code unknown unknown
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 450 V
Drain Current-Max (ID) 12 A 7 A
Drain-source On Resistance-Max 0.7 Ω 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 100 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 8 1
Pbfree Code No
JEDEC-95 Code TO-220AB
Moisture Sensitivity Level NOT SPECIFIED
Pulsed Drain Current-Max (IDM) 28 A

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