2SK1865 vs IRF840 feature comparison

2SK1865 Toshiba America Electronic Components

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IRF840 Intersil Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TOSHIBA CORP INTERSIL CORP
Part Package Code TO-220FL
Pin Count 3
Reach Compliance Code unknown not_compliant
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 12 A 8 A
Drain-source On Resistance-Max 0.7 Ω 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 100 W 125 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 8 2
Package Description TO-220AB, 3 PIN
ECCN Code EAR99
HTS Code 8541.29.00.95
JEDEC-95 Code TO-220AB
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 32 A
Turn-off Time-Max (toff) 104 ns
Turn-on Time-Max (ton) 56 ns

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