2SK1620(S)TR vs STB18N20 feature comparison

2SK1620(S)TR Renesas Electronics Corporation

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STB18N20 STMicroelectronics

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP STMICROELECTRONICS
Package Description SMALL OUTLINE, R-PSSO-G2 D2PAK-2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V 200 V
Drain Current-Max (ID) 10 A 18 A
Drain-source On Resistance-Max 0.15 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Rohs Code Yes
Part Package Code D2PAK
Pin Count 3
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN
Feedback Cap-Max (Crss) 70 pF
JEDEC-95 Code TO-263AB
JESD-609 Code e3
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Terminal Finish MATTE TIN
Turn-on Time-Max (ton) 135 ns

Compare 2SK1620(S)TR with alternatives

Compare STB18N20 with alternatives