2SC4843 vs NE68530-T1 feature comparison

2SC4843 Toshiba America Electronic Components

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NE68530-T1 California Eastern Laboratories (CEL)

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP CALIFORNIA EASTERN LABORATORIES
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3
Pin Count 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE LOW NOISE
Collector Current-Max (IC) 0.04 A 0.03 A
Collector-Base Capacitance-Max 0.9 pF 0.7 pF
Collector-Emitter Voltage-Max 10 V 6 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 50 65
Highest Frequency Band ULTRA HIGH FREQUENCY BAND S BAND
JESD-30 Code R-PDSO-G4 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 4 3
Operating Temperature-Max 125 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.1 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 10000 MHz 12000 MHz
Base Number Matches 1 2
Power Dissipation Ambient-Max 0.15 W

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