2SC4470 vs BF241D-T/R feature comparison

2SC4470 Toshiba America Electronic Components

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BF241D-T/R NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.08 A 0.025 A
Collector-Base Capacitance-Max 1.15 pF 0.5 pF
Collector-Emitter Voltage-Max 12 V 40 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 35
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 O-PBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 125 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 7000 MHz 150 MHz
Base Number Matches 1 1
JEDEC-95 Code TO-92
Power Dissipation Ambient-Max 0.3 W

Compare 2SC4470 with alternatives

Compare BF241D-T/R with alternatives