2SC4117-GR,LF(T
vs
2SC4117(TE85L,F)
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
8541.21.00.95
|
Additional Feature |
LOW NOISE
|
LOW NOISE
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
120 V
|
120 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
200
|
200
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation Ambient-Max |
0.1 W
|
0.1 W
|
Power Dissipation-Max (Abs) |
0.1 W
|
0.1 W
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
VCEsat-Max |
0.3 V
|
0.3 V
|
Base Number Matches |
1
|
1
|
|
|
|
Compare 2SC4117-GR,LF(T with alternatives
Compare 2SC4117(TE85L,F) with alternatives