2SC3867DI
vs
PN5179
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
HITACHI LTD
|
ON SEMICONDUCTOR
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.05 A
|
0.025 A
|
| Collector-Base Capacitance-Max |
1.5 pF
|
1 pF
|
| Collector-Emitter Voltage-Max |
11 V
|
12 V
|
| Configuration |
SINGLE
|
SINGLE
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
3800 MHz
|
900 MHz
|
| Base Number Matches |
2
|
7
|
| DC Current Gain-Min (hFE) |
|
25
|
| JEDEC-95 Code |
|
TO-92
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.6 W
|
|
|
|
Compare 2SC3867DI with alternatives
Compare PN5179 with alternatives