2SC3356-T1B-A vs 2SC3356-T1 feature comparison

2SC3356-T1B-A Renesas Electronics Corporation

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2SC3356-T1 NEC Compound Semiconductor Devices Ltd

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Renesas Electronics
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 1 pF 1 pF
Collector-Emitter Voltage-Max 12 V 12 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 50
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 7000 MHz 7000 MHz
Base Number Matches 1 2
Package Description MINIMOLD PACKAGE-3
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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