2SC3281-O vs 2SC3281O feature comparison

2SC3281-O Toshiba America Electronic Components

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2SC3281O Mospec Semiconductor Corp

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Rohs Code No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TOSHIBA CORP MOSPEC SEMICONDUCTOR CORP
Reach Compliance Code unknown unknown
Samacsys Manufacturer Toshiba
Case Connection COLLECTOR
Collector Current-Max (IC) 15 A 15 A
Collector-Emitter Voltage-Max 200 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 150 W
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 30 MHz 10 MHz
VCEsat-Max 3 V
Base Number Matches 1 4
Package Description ,
ECCN Code EAR99
Power Dissipation-Max (Abs) 150 W

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