2SC2309-D
vs
2N929
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
HITACHI LTD
|
RAYTHEON SEMICONDUCTOR
|
| Package Description |
CYLINDRICAL, O-PBCY-W3
|
TO-18, 3 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| JEDEC-95 Code |
TO-92
|
TO-18
|
| JESD-30 Code |
O-PBCY-W3
|
O-MBCY-W3
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
4
|
3
|
| Rohs Code |
|
No
|
| ECCN Code |
|
EAR99
|
| Collector Current-Max (IC) |
|
0.03 A
|
| Collector-Emitter Voltage-Max |
|
45 V
|
| Configuration |
|
SINGLE
|
| DC Current Gain-Min (hFE) |
|
40
|
| JESD-609 Code |
|
e0
|
| Number of Elements |
|
1
|
| Operating Temperature-Max |
|
175 °C
|
| Polarity/Channel Type |
|
NPN
|
| Power Dissipation-Max (Abs) |
|
1.8 W
|
| Terminal Finish |
|
TIN LEAD
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
30 MHz
|
|
|
|
Compare 2SC2309-D with alternatives
Compare 2N929 with alternatives