2SB647-D
vs
PDTC124EUT/R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Transferred
Ihs Manufacturer
RENESAS TECHNOLOGY CORP
NXP SEMICONDUCTORS
Package Description
CYLINDRICAL, O-PBCY-W3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
unknown
JESD-30 Code
O-PBCY-W3
R-PDSO-G3
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
WIRE
GULL WING
Terminal Position
BOTTOM
DUAL
Base Number Matches
2
2
Rohs Code
Part Package Code
SC-70
Pin Count
3
ECCN Code
EAR99
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC)
0.1 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
60
JESD-609 Code
e3
Number of Elements
1
Polarity/Channel Type
NPN
Terminal Finish
TIN
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare 2SB647-D with alternatives
Compare PDTC124EUT/R with alternatives