2SB1026DMTL-E vs 2SB1002CJTL-E feature comparison

2SB1026DMTL-E Renesas Electronics Corporation

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2SB1002CJTL-E Renesas Electronics Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP RENESAS ELECTRONICS CORP
Part Package Code UPAK UPAK
Package Description SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Pin Count 4 4
Manufacturer Package Code PLZZ0004CA PLZZ0004CA
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 1997-08-01 1997-08-01
Samacsys Manufacturer Renesas Electronics Renesas Electronics
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 1 A 1 A
Collector-Emitter Voltage-Max 100 V 50 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 160
JESD-30 Code R-PSSO-F3 R-PSSO-F3
JESD-609 Code e6 e6
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 1 W 1 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN BISMUTH TIN BISMUTH
Terminal Form FLAT FLAT
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 20 20
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 140 MHz 150 MHz
Base Number Matches 1 1

Compare 2SB1026DMTL-E with alternatives

Compare 2SB1002CJTL-E with alternatives